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| MITSUBISHI SEMICONDUCTOR M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor integrated circuits perform high-current driving with extremely low input-current supply. Production lineup has been newly expanded with the addition of 225mil (GP) package. M63826P and M63826FP have the same pin connection as M54526P and M54526FP. (Compatible with M54526P and M54526FP) More over, the features of M63826P and M63826FP are equal or superior to those of M54526P and M54526FP. FEATURES q Three package configurations (P, FP and GP) q Pin connection Compatible with M54526P and M54526FP q q q q q PIN CONFIGURATION IN1 IN2 1 2 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 IN3 3 INPUT IN4 4 IN5 IN6 IN7 GND 5 6 7 8 OUTPUT COM COMMON 16P4(P) 16P2N-A(FP) Package type 16P2S-A(GP) High breakdown voltage (BVCEO 50V) High-current driving (IC(max) = 500mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta = -40 to +85C) CIRCUIT DIAGRAM COM OUTPUT INPUT 10.5k APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces FUNCTION The M63826P, M63826FP and M63826GP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 10.5k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collectoremitter supply voltage is 50V maximum.The M63826FP and M63826GP is enclosed in molded small flat package, enabling space-saving design. 7.2k 3k GND The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 1.47(P)/1.00(FP)/0.80(GP) -40 ~ +85 -55 ~ +125 Unit V mA V mA V W C C Jan. 2000 MITSUBISHI SEMICONDUCTOR M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Duty Cycle P : no more than 8% FP : no more than 5% GP : no more than 4% Duty Cycle P : no more than 30% FP : no more than 20% GP : no more than 15% Parameter Limits min 0 0 typ -- -- max 50 400 mA 0 5 0 -- -- -- 200 25 0.5 V V Unit V IC VIH VIL ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 50 -- -- -- -- -- -- 1000 typ -- 1.2 1.0 0.9 0.9 1.4 -- 2500 max -- 1.6 1.3 1.1 1.4 2.0 100 -- Unit V V mA V A -- ICEO = 100A II = 500A, IC = 350mA Collector-emitter saturation voltage II = 350A, IC = 200mA II = 250A, IC = 100mA Input current VI = 10V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 15 350 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Vo TIMING DIAGRAM INPUT 50% 50% Measured device OPEN PG RL OUTPUT OUTPUT 50% 50% 50 CL ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VP = 8VP-P (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 500 II = 500A Output Saturation Voltage Collector Current Characteristics Power dissipation Pd(max) (W) 1.5 M63826P Collector current Ic (mA) 400 300 1.0 M63826FP 0.744 0.520 0.418 200 Ta = 25C Ta = 85C Ta = -40C M63826GP 0.5 100 0 0 25 50 75 85 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63826P) 500 1 Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M63826P) 500 Collector current Ic (mA) Collector current Ic (mA) 400 2 400 1 300 3 4 5 6 7 300 2 200 *The collector current values represent the current per circuit. *Repeated frequencyy 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 100 3 4 5 6 7 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63826FP) 500 1 Duty cycle (%) Duty Cycle-Collector Characteristics (M63826FP) 500 Collector current Ic (mA) Collector current Ic (mA) 400 400 300 2 3 4 5 6 7 300 1 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 2 4 *The collector current values 5 represent the current per circuit. 76 *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63826GP) 500 500 Duty Cycle-Collector Characteristics (M63826GP) Collector current Ic (mA) 400 1 Collector current Ic (mA) 400 300 1 300 2 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 3 4 5 6 7 200 2 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 0 0 3 4 5 6 7 0 20 40 60 80 100 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104 DC amplification factor hFE 7 5 3 2 VCE = 4V Ta = 85C Duty cycle (%) Grounded Emitter Transfer Characteristics 500 Collector current Ic (mA) 400 300 103 7 5 3 2 Ta = -40C Ta= 25C 200 Ta = 85C Ta = 25C 100 Ta = -40C 102 101 2 3 5 7 102 2 3 5 7 103 0 0 1 2 3 4 5 Collector current IcC (mA) Input Characteristics 4 Forward bias current IF (mA) Input voltage VI (V) Clamping Diode Characteristics 500 400 Input Current II (mA) 3 Ta = -40C 300 2 200 Ta = 25C 1 Ta = 25C Ta = 85C 100 Ta = 85C Ta = -40C 0 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Jan. 2000 |
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